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    DSA30I150PA 0.0 0.4 0.8 1.2 0 10 [A] 20 F 30 40 50 60 0 50 100 150 0.0001 0.001 0.01 75°C 0.1 1 150°C 10 TVJ=175°C 010203051525A 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 0.1 1 0 40 80 120 160 200 0 10 20 [A] 30 40 0 50 100 150 100 200 [pF] 300 T 400 500 600 700 125°C d = 0.5 I VF [V] IR [mA] VR [ VR [V] V] C TC [ IF(AV) [A] °C] P(AV) [W] ZthJC [K/W] t[s] Note: All curves are per diode Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case at various duty cycles IF(AV) TVJ = 25°C 125°C 150°C TVJ=25°C DC 100°C 50°C 25°C d = DC 0.5 0.33 0.25 0.17 0.08 Rthi [K/W] 0.139 0.176 0.305 0.23 ti [s] 0.00028 0.0033 0.028 0.17 Schottky IXYS reserves the right to change limits, conditions and dimensions. 20131031c Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |